Specification :

9N Monocrysilicon wafer, can be made into quality cell with 2.6W-2.85W, no broken and no stain, come from famous japanese company
We can provide you solar wafer 156* 156 and 125* 125mm for home or commercial or industrial etc

Property Specification
Crystal and material properties
Crystallinity Monocrystalline
Conductivity type P-type
Dopant Boron
Specific resistance 1.0 - 3.0 Wcm; 90% within 1-1.8 ohm-cm
Crystal size £ 10 crystals per cm²
Oxygen concentration £ 9.8 x 1017 atoms/ cm³
Carbon concentration £ 5 x 1016 atoms/ cm³
Effective minority
carrier lifetime 1: ³ 1 µ s
2: Average > 3.5 µ s
3: No lifetime dip > 3 µ s
Geometry
Shape Square with 45± 10° chamfer at the corner
Length of wafer edge 156 + / - 0, 5 mm Cpke1.33
Minimum square area covered Min ( d-0.5 mm) x( d-0.5 mm) , Max ( d+ 0.5 mm) x( d+ 0.5 mm)
Square area, outside of
which no part of the wafer
can extend
Bevel edge width 1.5 ± 0.5 mm
Average thickness 200 ± 20 µ m with Cpke1.33
Total thickness variation TTV d50 µ m with Cpke1.33
Warp/ Bow d40 µ m with Cpke1.33
Appearance
Edge defect ( through wafer) d5 mm with d0.5 mm

Surface chipping None above 0.2 mm wide and 0.1 mm deep

Saw marks depth £ 20 µ m
Saw marks ( steps) depth £ 15 µ m
Cracks and pin holes No visual cracks and
pin holes
Surface properties
Wafer slicing Glycol based wafering
Wafer cleaning Water + detergent
Wafer surface As cut, no stains with the
exception of water stains
and stains of silicon dust
Packaging
Packaging method Cardboard boxes packed
in cardboard cartons
Labelling on each Date / Time, Ingot number,
cardboard boxes Box number, Number of
wafers, Thickness
Labelling on each Carton Number, Wafer
cardboard cartons description, Article number
Number of wafers, Date